Silicon Carbide MOSFET in a TO263-7L plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
  • Switch Mode Power Supplies
  • UPS
  • Solar string inverter and solar optimizer
  • EV Charger
  • Motor Drives
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2M150120B7 VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     28.7 A
Ptot  total power dissipation  Tmb = 25 °C     231 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 10 A; Tj = 25 °C   150  
QG(tot)  total gate charge  ID = 10 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   40   nC
QGD  gate-drain charge   9.8   nC
Qr  recovered charge  ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   26   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMD Volume production Standard Marking WNSC2M150120B76J 9340 734 66118
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M150120B7 9340 734 66118 WNSC2M150120B76J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M150120B7 WNSC2M150120B76J WNSC2M150120B7 Leaded  D Always Pb-free   3

Chemical Content - WNSC2M150120B7



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