Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • Motor Drives


Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D401200CW VRRM  repetitive peak reverse voltage       1200 V
IO(AV)  limiting average forward current  δ = 0.5; Tmb ≤ 119 °C; square-wave pulse; both diodes conducting     40 A
Tj  junction temperature       175 °C
VF  forward voltage  IF = 20 A; Tj = 25 °C; per diode   1.45 1.65 V
Qr  reverse charge  IF = 20 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode   44   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2D401200CWQ 9340 721 92127
WNSC2D401200CW6Q 9340 728 89127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D401200CW 9340 721 92127 WNSC2D401200CWQ NA NA  
9340 728 89127 WNSC2D401200CW6Q

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D401200CW WNSC2D401200CWQ WNSC2D401200CW Leaded  H   NA NA
Always Pb-free    

Chemical Content - WNSC2D401200CW


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