WNSC2D101200D

Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications

 

  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D101200D VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; Tmb ≤ 151 °C; square-wave pulse     10 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 10 A; Tj = 25 °C   1.42 1.60 V
Qr  reverse charge  IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   22   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D101200D

TO252

STANDARD MARK SMD Volume production Standard Marking WNSC2D101200D6J 9340 728 50118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D101200D 9340 728 50118 WNSC2D101200D6J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D101200D WNSC2D101200D6J WNSC2D101200D Leaded  D always Pb-free   1

Chemical Content - WNSC2D101200D

 

Disclaimer

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