WMS30N420K is a high performance logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • RoHS Compliant, Halogen Free and Lead Free
  • Load Switch
  • General PWM Applications
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS30N420K VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±20 V
ID  drain current  VGS = 10 V; Tmb = 25 °C     4.8 A
Ptot  total power dissipation  Tmb = 25 °C     1.4 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 4.8 A   35 42
 VGS = 4.5 V; ID = 3 A   46 65
QG(tot)  total gate charge  ID = 4.8 A; VDS = 15 V; VGS = 10 V   5.1   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMDVolume productionStandard MarkingWMS30N420KX9340 734 74115
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS30N420K9340 734 74115WMS30N420KXNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS30N420KWMS30N420KXWMS30N420KLeaded  Dalways Pb-free1

Chemical Content - WMS30N420K



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