WMS30N1200SK is a high performance super logic level N-channel MOSFET in SOT23 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • High ESD sensitivity devices
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • RoHS Compliant, Halogen Free and Lead Free
  • Load Switch
  • General PWM Applications
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WMS30N1200SK VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±12 V
ID  drain current  VGS = 4.5 V; Tmb = 25 °C     2.7 A
Ptot  total power dissipation  Tmb = 25 °C     1.4 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 4.5 V; ID = 3 A   100 120
 VGS = 2.5 V; ID = 3 A   124 145
QG(tot)  total gate charge  ID = 3 A; VDS = 15 V; VGS = 4.5 V   2.7   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


REEL 7\" Q1/T1 *STANDARD MARK SMD" Volume production Standard Marking WMS30N1200SKX 9340 740 50115
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS30N1200SK 9340 740 50115 WMS30N1200SKX NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS30N1200SK WMS30N1200SKX WMS30N1200SK Leaded  D Always Pb-free    

Chemical Content - WMS30N1200SK



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