WMS30N020S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • 100% UIS Tested
  • RoHS Compliant, Halogen Free
  • DC−DC Converters
  • BLDC Motor Control
  • Load Switch
  • Lithium-ion Battery Protection
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS30N020S VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±20 V
ID  drain current  VGS = 10 V; Tmb = 25 °C     159 A
Ptot  total power dissipation  Tmb = 25 °C     83 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 20 A   1.6 2
 VGS = 4.5 V; ID = 20 A   2.1 3.3
QG(tot)  total gate charge  ID = 20 A; VDS = 15 V; VGS = 10 V   146   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMDVolume productionStandard MarkingWMS30N020SJ9340 734 20118
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS30N020S9340 734 20118WMS30N020SJNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS30N020SWMS30N020SJWMS30N020SLeaded  H1

Chemical Content - WMS30N020S



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