WMS20N270SE is a high performance super logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • 100% UIS Tested
  • RoHS Compliant, Halogen Free and Lead Free
  • DC−DC Converters
  • BLDC Motor Control
  • Load Switch
  • Lithium-ion Battery Protection
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS20N270SE VDS  drain-source voltage       20 V
VGS  gate-source voltage       ±10 V
ID  drain current  VGS = 4.5 V; Tmb = 25 °C     18 A
Ptot  total power dissipation  Tmb = 25 °C     14 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 4.5 V; ID = 8 A   17 27
 VGS = 2.5 V; ID = 3 A   25 44
QG(tot)  total gate charge  ID = 8 A; VDS = 10 V; VGS = 4.5 V   5.1   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMD Volume production Standard Marking WMS20N270SEJ 9340 733 66118
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS20N270SE 9340 733 66118 WMS20N270SEJ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS20N270SE WMS20N270SEJ WMS20N270SE Leaded  D always Pb-free   1

Chemical Content - WMS20N270SE



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