40A 650V Trench Fieldstop IGBT with anti-parallel diode in TO3PF pacakge. The WeEn WG40N65DFJ uses advanced field stop technology. This device is ideal for Motor Driver and PFC.

Features and Benefits
  • Advanced Trench Fieldstop technology
  • Very soft, fast recovery anti-parallel diode
  • High speed switching
  • EMI Improved Design
  • Motor driver
  • PFC
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WG40N65DFJ VCE  collector-emitter voltage       650 V
IC  collector current  TC = 25 °C     31 A
IF  diode forward current  TC = 25 °C     25 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 40 A; Tj = 25 °C   1.5 1.95 V
VF  diode forward voltage  VGE = 0 V; IF = 10 A; Tj = 25 °C   1.24   V
VGE(th)  gate-emitter threhold voltage  IC = 1 mA; VCE = VGE 4.2 5.2 6.2 V
Qg  gate charge  VCC = 520 V; IC = 40 A; VGE = 0 to 15 V; Tj = 25 °C   173   nC
Eon  turn-on energy  Tj = 25 °C; VCC = 400 V; IC = 40 A; VGE = 15V / 0V; RG = 10 Ω   1.7   mJ
Eoff  turn-off energy   1   mJ
Qr  reverse recovery charge  Tj = 25 °C; VR = 400 V; IF = 30 A; dIF/dt = 500 A/us   646   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACK Volume production Standard Marking WG40N65DFJQ 9340 733 70127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG40N65DFJ 9340 733 70127 WG40N65DFJQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG40N65DFJ WG40N65DFJQ WG40N65DFJ Leaded  H   NA  

Chemical Content - WG40N65DFJ



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