Silicon Carbide Schottky diode (Bare Die).

Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr*VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ Max Unit
WB25SC120AL VRRM* repetitive peak off-state voltage    -  - 1200 V
IF(AV)** average forward current δ = 0.5; square-wave pulse  -  - 25 A
VF** forward voltage IF = 25 A; Tj = 150 °C  - 1.9 2.3 V
Qrr** reverse recovery time IF = 25 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C  - 54  - nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


CHIPS ON WFR, UNSAWN ON FFC, CONDUCTIVE Volume production Standard Marking WB25SC120ALZ 9340 728 32006
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB25SC120AL 9340 728 32006 WB25SC120ALZ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB25SC120AL WB25SC120ALZ WB25SC120AL Leaded  D always Pb-free NA NA

Chemical Content -


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