BTA416Y-600C

Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high Tj] operating capability and an internally isolated mounting base.

Features and Benefits
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High surge capability
  • High Tj(max)
  • Isolated mounting base with 2500 V (RMS) isolation
  • Less sensitive gate for high noise immunity
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
Applications
  • Electronic thermostats (heating and cooling)
  • High power motor controls
  • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA416Y-600C VDRM repetitive peak off-state voltage       600 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 108 °C     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     160 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     176 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C 2   35 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C 2   35 mA
IH holding current VD = 12 V; Tj = 25 °C     35 mA
VT on-state voltage IT = 20 A; Tj = 25 °C   1.2 1.5 V
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/µs
VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (without snubber condition); gate open circuit 10     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (without snubber condition); gate open circuit 5     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA416Y-600C IITO220.jpg
IITO220
Horizontal, Rail Pack Volume production Standard Marking BTA416Y-600C,127 9340 613 22127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA416Y-600C 9340 613 22127 BTA416Y-600C,127 NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA416Y-600C BTA416Y-600C,127   BTA416Y-600C Leaded E   NA NA

Chemical Content - BTA416Y-600C

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