BTA440Z-800BT

Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

TYN50W-1600T

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability,high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).

WTMH80T16R

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.

BT153-1200T

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring high bidirectional blocking voltage capability, high current inrush capability and high thermal cycling performance

BTA308B-800ET

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plastic package. This triac is intended for use in motor control circuits where high blocking voltage, high static and dynamic dVD/dt as well as high dIcom/dt can occur. This "series C0T" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high operating capability (Tj(max) = 150 °C)

BTA330X-800CT

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.