Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (T_j(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Planar passivated Silicon Controlled Rectifier in a TO247 plastic package intended for use in applications requiring very high inrush current capability，high thermal cycling performance and high junction temperature capability (T_j(max) = 150 °C).

Dual Silicon Carbide Schottky diode in a TO247 plastic package, designed for high frequency switched-mode power supplies.

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies.

EEPP^TM- Efficiency Enhanced Pt Planar diode in a 2-leads TO247-2L plastic package.

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated SCR with sensitive gate in surface mountable SOT23 (TO-236AB) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance

Ultrafast power diode in IITO220-2L plastic package