Silicon Carbide Schottky diode in a SOD123 plastic package, designed for high voltage, high frequency, and ultra compact designs

Features and Benefits
  • New 6th Generation Technology
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • High Forward Surge Capability IFSM
  • Reduced Losses in Associated MOSFET
  • Reduced EMI
  • Reduced Cooling Requirements
  • RoHS Compliant
  • Low power SMPS
  • LED driver
  • Gate driver bootstrap charger
  • Noise snubber
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC6D02650P VRRM  repetitive peak reverse voltage       700 V
IF(AV)  average output current  δ = 0.5; square-wave pulse     2 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 2 A; Tj = 25 °C   1.26 1.40 V
Qr  reverse charge  IF = 2 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   4   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMD Volume production Standard Marking WNSC6D02650P6X 9340 737 95115
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC6D02650P 9340 737 95115 WNSC6D02650P6X NA NA  


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC6D02650P WNSC6D02650P6X WNSC6D02650P Leaded  D Always Pb-free   1

Chemical Content - WNSC6D02650P



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