Silicon Carbide Schottky diode in a TO252 (DPAK) plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • New 6th Generation Technology
  • Low Forward Voltage Drop
  • Low Reverse Leakage Current
  • High Forward Surge Capability IFSM
  • Reduced Losses in Associated MOSFET
  • Reduced EMI
  • Reduced Cooling Requirements
  • RoHS Compliant
  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • Motor Drives
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC6D02650D VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average output current  δ = 0.5; square-wave pulse; Tmb ≤ 162 °C     2 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 2 A; Tj = 25 °C   1.26 1.4 V
Qr  reverse charge  IF = 2 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   4   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMDVolume productionStandard MarkingWNSC6D02650D6J9340 734 07118
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC6D02650D9340 734 07118WNSC6D02650D6JNANA


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC6D02650DWNSC6D02650D6JWNSC6D02650DLeaded  Dalways Pb-free1

Chemical Content - WNSC6D02650D



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