Silicon Carbide MOSFET in a TO247 plastic package, designed for high frequency, high efficiency systems.

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • 100% UIS Tested
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
  • Switch Mode Power Supplies
  • UPS
  • Battery formation instrument
  • Solar string inverter and solar optimizer
  • EV Charger
  • Motor Drives
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2M45065W VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     650 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     82 A
Ptot  total power dissipation  Tmb = 25 °C; Tj =175 °C     395 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 25 A; Tj = 25 °C   45 58 
QG(tot)  total gate charge  ID = 25 A; VDS = 800 V; VGS = -4 V/18 V; Tj = 25 °C   87   nC
QGD  gate-drain charge   9   nC
Qr  recovered charge  ISD = 25 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   94   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2M45065W6Q 9340 738 32127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2M45065W 9340 738 32127 WNSC2M45065W6Q NA NA  


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2M45065W WNSC2M45065W6Q WNSC2M45065W Leaded  D Always Pb-free    

Chemical Content - WNSC2M45065W



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