WNSC2D501200W

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Power factor correction
  • UPS & energy storage systems
  • PV MPPT circuit
  • 3-level rectifier and inverters
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D501200W VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current Tmb ≤ 126 °C; DC     50 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 50 A; Tj = 25 °C   1.42 1.6 V
Qr  reverse charge  IF = 50 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   125   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D501200W

TO247-2L

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2D501200W6Q 9340 730 07127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D501200W 9340 730 07127 WNSC2D501200W6Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D501200W WNSC2D501200W6Q WNSC2D501200W Leaded  D always Pb-free   NA

Chemical Content - WNSC2D501200W

 

Disclaimer

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