WMSC010H12B1L

WeEnPACK-B1 module with WeEn 1200V Gen2 SiC MOSFET and Integrated NTC temperature sensor, configured with Pressfit pin and pre-applied thermal paste.

Features and Benefits
  • Half bridge topology
  • PressFit pins technology
  • Pre-applied thermal interface material
  • Low RDSon
  • Low Switching Losses
  • Low Qg and Crss
  • Low Inductive Design
  • Integrated with NTC temperaure sensor
Applications
  • Auxiliary Inverters
  • DC-DC converters
  • Automotive Applications
  • Hybrid Electrical Vehicles (H)EV
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WMSC010H12B1L VDS  drain-source voltage       1200 V
ID  drain current  VGS = 18 V; Th = 25 °C     145 A
Tj  junction temperature   -40   150 °C
RDS(on)  drain-source on-state
 resistance
 VGS = 15 V; ID = 100 A; Tj = 25 °C   10  
 VGS = 18 V; ID = 100 A; Tj = 25 °C   8.3  14
QG(tot)  total gate charge  ID = 100 A; VDS = 800 V; VGS = -4 V/18 V;
 T
j = 25 °C
  402   nC
QGD  gate-drain charge   62   nC
Qr  recovered charge  ISD = 100 A; VGS = -4 V; di/dt = 6500 A/μs;
 V
R = 600 V; Tj = 25 °C
  950   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WMSC010H12B1L

WeEnPACK-B1

STANDARD MARKING*TRAY PACK,EPE OR BLISTERVolume productionStandard MarkingWMSC010H12B1L6T9340 744 44300
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMSC010H12B1L9340 744 44300WMSC010H12B1L6TNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMSC010H12B1LWMSC010H12B1L6TWMSC010H12B1LLeaded  E

Chemical Content - WMSC010H12B1L

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.