WMS30N140E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • 100% UIS Tested
  • RoHS Compliant, Halogen Free and Lead Free
  • DC−DC Converters
  • BLDC Motor Control
  • Load Switch
  • Lithium-ion Battery Protection
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS30N140E VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±20 V
ID  drain current  VGS = 10 V; Tmb = 25 °C     30 A
Ptot  total power dissipation  Tmb = 25 °C     19 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 16 A   10 14
 VGS = 4.5 V; ID = 5 A   16 21