WMS30N050S is a high performance logic level N-channel MOSFET in TO252 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications.

Features and Benefits
  • Advance High Cell Density Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Switching Losses
  • Optimized Gate Charge to Minimize Driver Losses
  • 100% UIS Tested
  • RoHS Compliant, Halogen Free
  • DC−DC Converters
  • BLDC Motor Control
  • Load Switch
  • Lithium-ion Battery Protection
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WMS30N050S VDS  drain-source voltage       30 V
VGS  gate-source voltage       ±20 V
ID  drain current  VGS = 10 V; Tmb = 25 °C     87 A
Ptot  total power dissipation  Tmb = 25 °C     63 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 20 A   4.1 5
 VGS = 4.5 V; ID = 20 A   5.8 8
QG(tot)  total gate charge  ID = 20 A; VDS = 15 V; VGS = 10 V   44   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


STANDARD MARK SMD Volume production Standard Marking WMS30N050SJ 9340 733 49118
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WMS30N050S 9340 733 49118 WMS30N050SJ NA NA  


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WMS30N050S WMS30N050SJ WMS30N050S Leaded  D always Pb-free   1

Chemical Content - WMS30N050S



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