WG50N65MAW1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel diode in TO247 package to provide extremely low VCE(sat), and excellent switching performance. This device offers Best-in-Class efficiency in hard switching and resonant topology.

Features and Benefits
  • Maximum junction temperature 175 °C
  • Positive Temperature efficient for easy paralleling
  • Very soft, fast recovery anti-parallel diode
  • Smooth & Optimized switching
  • EMI Improved Design
  • Motor control
  • PFC
  • UPS
  • Resonant converters
  • Mid to high range switching frequency converters
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WG50N65MAW1 VCE  collector-emitter voltage       650 V
IC  collector current  TC = 25 °C     100 A
IF  diode forward current  TC = 25 °C     60 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.55 1.95 V
VF  diode forward voltage  VGE = 0 V; IF = 30 A; Tj = 25 °C   1.9   V
VGE(th)  gate-emitter threhold voltage  IC = 0.5 mA; VCE = VGE 4.3 5.4 6.5 V
Qg  gate charge  VCC = 520 V; IC = 50 A; VGE = 15 V; Tj = 25 °C   133   nC
Eon  turn-on energy  Tj = 25 °C; VCC = 400 V; IC = 50 A; VGE = 15V / 0V; RG = 10 Ω   1.37   mJ
Eoff  turn-off energy   0.72   mJ
Qr  reverse recovery charge  Tj = 25 °C; VR = 400 V; IF = 30 A; dIF/dt = 500 A/us   221   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACK Volume production Standard Marking WG50N65MAW1Q 9340 736 74127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG50N65MAW1 9340 736 74127 WG50N65MAW1Q NA NA  


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG50N65MAW1 WG50N65MAW1Q WG50N65MAW1 Leaded  H NA    

Chemical Content - WG50N65MAW1



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