WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel
diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.

Features and Benefits
  • Positive Temperature efficient for Easy Parallel Operating
  • High Current Capability
  • Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
  • EMI Improved Design
  • Solar Inverter
  • UPS
  • PFC
  • Converters
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WG50N65LDJ1 VCE  collector-emitter voltage       650 V
IC  collector current  TC = 25 °C     43 A
IF  diode forward current  TC = 25 °C     25 A
VCE(sat)  collector-emitter saturation voltage  VGE = 15 V; IC = 50 A; Tj = 25 °C   1.25 1.55 V
VF  diode forward voltage  VGE = 0 V; IF = 10 A; Tj = 25 °C   1.18   V
VGE(th)  gate-emitter threhold voltage  IC = 500 µA; VCE = VGE 4 5 6 V
Qg  gate charge  VCC = 520 V; IC = 50 A; VGE = 15 V; Tj = 25 °C   237   nC
Eon  turn-on energy  Tj = 25 °C; VCC = 400 V; IC = 50 A; VGE = 15V / 0V; RG = 10 Ω   1.69   mJ
Eoff  turn-off energy   1.24   mJ
Qr  reverse recovery charge  Tj = 25 °C; VR = 400 V; IF = 10 A; dIF/dt = 500 A/us   585   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)


HORIZONTAL, RAIL PACKVolume productionStandard MarkingWG50N65LDJ1Q9340 734 46127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WG50N65LDJ19340 734 46127WG50N65LDJ1QNANA


Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WG50N65LDJ1WG50N65LDJ1QWG50N65LDJ1Leaded  H

Chemical Content - WG50N65LDJ1



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