WG50N65LDJ1 uses advanced Fine Trench Field-stop IGBT technology with anti-parallel
diode in TO3PF package to provide extremely low on state voltage, and minimal switching performance. This device is ideal for low switching frequency power conversion applications.
- Positive Temperature efficient for Easy Parallel Operating
- High Current Capability
- Low saturation Voltage VCE(Sat) = 1.25 V(Typ.) @ IC = 50 A
- EMI Improved Design
- Solar Inverter
- UPS
- PFC
- Converters
| Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
| WG50N65LDJ1 | VCE | collector-emitter voltage | 650 | V | |||
| IC | collector current | TC = 25 °C | 43 | A | |||
| IF | diode forward current | TC = 25 °C | 25 | A | |||
| VCE(sat) | collector-emitter saturation voltage | VGE = 15 V; IC = 50 A; Tj = 25 °C | 1.25 | 1.55 | V | ||
| VF | diode forward voltage | VGE = 0 V; IF = 10 A; Tj = 25 °C | 1.18 | V | |||
| VGE(th) | gate-emitter threhold voltage | IC = 500 µA; VCE = VGE | 4 | 5 | 6 | V | |
| Qg | gate charge | VCC = 520 V; IC = 50 A; VGE = 15 V; Tj = 25 °C | 237 | nC | |||
| Eon | turn-on energy | Tj = 25 °C; VCC = 400 V; IC = 50 A; VGE = 15V / 0V; RG = 10 Ω | 1.69 | mJ | |||
| Eoff | turn-off energy | 1.24 | mJ | ||||
| Qr | reverse recovery charge | Tj = 25 °C; VR = 400 V; IF = 10 A; dIF/dt = 500 A/us | 585 | nC |
| Type number | Package | Packing | Product status | Marking | Orderable part number | Ordering code (12NC) |
|---|---|---|---|---|---|---|
| WG50N65LDJ1 |
SOT1293 | HORIZONTAL, RAIL PACK | Volume production | Standard Marking | WG50N65LDJ1Q | 9340 734 46127 |
| Type number | Ordering code (12NC) | Orderable part number | Region | Distributor | Order sample |
|---|---|---|---|---|---|
| WG50N65LDJ1 | 9340 734 46127 | WG50N65LDJ1Q | NA | NA |
| Chemical content | Orderable part number | Type number | RoHS / RHF | Leadfree conversion date | MSL | MSL LF |
|---|---|---|---|---|---|---|
| WG50N65LDJ1 | WG50N65LDJ1Q | WG50N65LDJ1 | 
 |
Chemical Content - WG50N65LDJ1
Disclaimer
All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
