WBxx25SC120BL

Silicon Carbide Schottky diode (Bare Die).

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Features and Benefits
  • Extremely fast reverse recovery time
  • Low figure of merit (Qr * VF)
  • Highly stable switching performance
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WBxx25SC120BL VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     25 A
Tj  junction temperature    -55   175
VF  forward voltage  IF = 25 A; Tj = 25 °C   1.42 1.60 V
VF  forward voltage  IF = 25 A; Tj = 150 °C   1.90 2.30 V
VF  forward voltage  IF = 25 A; Tj = 175 °C   2.00 2.50 V
Qr  recovered charge  IF = 25 A; VR = 400 V; dIF/dt = 500 A/us; Tj = 25 °C   54   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WBSF25SC120BL NAU000 NO MARK*CHIPS ON WFR, SAWN ON FFC, NON-COND Volume production Standard Marking WBSF25SC120BL6V 9340 737 57005
WBST25SC120BL

NAU000

NO MARK*CHIPS IN WAFFLE PACK,SAWN Volume production Standard Marking WBST25SC120BL6W

9340 737 58007

WB25SC120BL

NAU000

NO MARK*CHIPS ON WFR, UNSAWN ON FFC, CONDUCTIVE Volume production Standard Marking WB25SC120BL6Z 9340 737 17006
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WBSF25SC120BL 9340 737 57005 WBSF25SC120BL6V NA NA  
WBST25SC120BL 9340 737 58007 WBST25SC120BL6W NA NA  
WB25SC120BL 9340 737 17006 WB25SC120BL6Z NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WBSF25SC120BL WBSF25SC120BL6V WBSF25SC120BL Leaded  D always Pb-free    
WBST25SC120BL WBST25SC120BL6W WBST25SC120BL Leaded  D always Pb-free    
WB25SC120BL WB25SC120BL6Z WB25SC120BL Leaded  D always Pb-free    

Chemical Content - WBxx25SC120BL

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.