WBxx160SCM120CGAL

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx160SCM120CGAL VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     24 A
Ptot  total power dissipation  Tmb = 25 °C     155 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 10 A; Tj = 25 °C   160  196
QG(tot)  total gate charge  ID = 10 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   35   nC
QGD  gate-drain charge   8   nC
Qr  recovered charge  ISD = 10 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   78   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB160SCM120CGAL

NAU000

  Volume production Standard Marking WB160SCM120CGALZ 9340 734 79006
WBSF160SCM120CGAL WBSF160SCM120CGALV 9340 735 14005
WBST160SCM120CGAL WBST160SCM120CGALW -
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB160SCM120CGAL 9340 734 79006 WB160SCM120CGALZ NA NA  
WBSF160SCM120CGAL 9340 735 14005 WBSF160SCM120CGALV
WBST160SCM120CGAL - WBST160SCM120CGALW

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB160SCM120CGAL WB160SCM120CGALZ WB160SCM120CGAL Leaded  D always Pb-free    
WBSF160SCM120CGAL WBSF160SCM120CGALV WBSF160SCM120CGAL
WBST160SCM120CGAL WBST160SCM120CGALW WBST160SCM120CGAL

Chemical Content -WBxx160SCM120CGAL

Disclaimer

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