WBxx060SCM120CGAN

Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)

Features and Benefits
  • Low on-resistance
  • Fast switching speed
  • 0V turn-off gate voltage for simple gate drive
  • Easy to parallel
  • Controllable dV/dt for optimized EMI
  • Reduced cooling requirements
  • RoHS compliant
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
WBxx060SCM120CGAN VDS  drain-source voltage  25 °C ≤ Tj ≤ 175 °C     1200 V
ID  drain current  VGS = 18 V; Tmb = 25 °C     61 A
Ptot  total power dissipation  Tmb = 25 °C     417 W
Tj  junction temperature   -55   175 °C
RDS(on)  drain-source on-state resistance  VGS = 15 V; ID = 25 A; Tj = 25 °C   60  
QG(tot)  total gate charge  ID = 25 A; VDS = 800 V; VGS = 0 V/18 V; Tj = 25 °C   83   nC
QGD  gate-drain charge   15   nC
Qr  recovered charge  ISD = 25 A; di/dt = 500 A/μs; VDS = 400 V; Tj = 25 °C   64   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB060SCM120CGAN

NAU000

  Volume production Standard Marking WB060SCM120CGAN6Z 9340 734 77006
WBSF060SCM120CGAN WBSF060SCM120CGAN6V 9340 735 10005
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB060SCM120CGAN 9340 734 77006 WB060SCM120CGAN6Z NA NA  
WBSF060SCM120CGAN 9340 735 10005 WBSF060SCM120CGAN6V

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB060SCM120CGAN WB060SCM120CGAN6Z WB060SCM120CGAN Leaded  D always Pb-free    
WBSF060SCM120CGAN WBSF060SCM120CGAN6V WBSF060SCM120CGAN

Chemical Content -WBxx060SCM120CGAN

Disclaimer

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