WB75FC60AL

Hyperfast power diode (Bare die).

Features and Benefits
  • Fast switching and soft reverse recovery characteristics
  • Low forward voltage drop
  • Low leakage current
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WB75FC60AL VRRM  repetitive peak reverse voltage       600 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     75 A
VF  forward voltage  IF = 75 A; Tj = 150 °C   2.20 2.75 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C     50 ns
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WB75FC60AL     Volume production Standard Marking WB75FC60ALZ 9340 732 04006
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WB75FC60AL 9340 732 04006 WB75FC60ALZ NA NA  

申请瑞能样品之前,请先登录或者注册

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WB75FC60AL WB75FC60ALZ WB75FC60AL Leaded  H      

Chemical Content - WB75FC60AL

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.