TYN16X-600CTN

Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C)

Features and Benefits
  • High junction operating temperature capability
  • High thermal cycling performance
  • High voltage capability
  • Planar passivated for voltage ruggedness and reliability
Applications
  • Ignition circuits
  • Motor control
  • Protection circuits e.g. SMPS inrush current
  • Voltage regulation
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
TYN16X-600CTN VDRM repetitive peak off-state voltage       600 V
VRRM repetitive peak reverse voltage       600 V
IT(AV) average on-state current half sine wave; Th ≤ 81 °C     10.2 A
IT(RMS) RMS on-state current half sine wave; Th ≤ 81 °C     16 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     180 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     198 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C 3.5 5 6 mA
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 500     V/µs
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
TYN16X-600CTN

SOT186A

HORIZONTAL, RAIL PACKVolume productionStandard MarkingTYN16X-600CTNQ9340 695 34127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
TYN16X-600CTN9340 695 34127TYN16X-600CTNQNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
TYN16X-600CTNTYN16X-600CTNQTYN16X-600CTNLeaded  ENANANA

Chemical Content - TYN16X-600CTN

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.