ESDAHD12BE2

The ESDAHDxxBE2 series is designed for applications requiring transient overvoltage protection capability. This series is available in bidirectional configurations and is rated at 350 Watts for an 8/20μs waveshape, designed to protect sensitive components which are connected to power, data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients).

Features and Benefits
  • Peak pulse power 350W @ 8/20us waveform
  • IEC 61000-4-2 (ESD) ±30kV(air), ±30kV(contact)
  • Protect one bidirectional line or two unidirectional lines
  • Low clamping voltage
  • Low leakage current
  • Meet MSL level1
  • Halogen free and RoHS compliant
Applications
  • Mobile phones & accessories
  • Portable Electronics
  • Computers and peripherals
  • Microprocessor based equipment
  • Personal Digital Assistants (PDA)
  • Networking and Telecom
  • Serial and Parallel Ports
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ESDAHD12BE2 VR  reverse working voltage       12 V
VBR  reverse breakdown voltage  IT = 1 mA 13.3     V
Tj  junction temperature   -55   150 °C
VC  clamping voltage  IPP = 1 A; tp = 8/20 μs     20 V
 IPP = 16 A; tp = 8/20 μs     30 V
IPP  peak pulse current  8/20μs waveform     16 A
IR  reverse leakage current  VR = 12 V     1 μA
Cj  Junction Capacitance  VR = 0 V; f = 1 MHz;   70   pF
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
ESDAHD12BE2

SOT23-3L

STANDARD MARK SMD Volume production Standard Marking ESDAHD12BE2X 9340 730 84115
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
ESDAHD12BE2 9340 730 84115 ESDAHD12BE2X NA NA  

申请瑞能样品之前,请先登录或者注册

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
ESDAHD12BE2 ESDAHD12BE2X ESDAHD12BE2 Leaded  D always Pb-free 1 1

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.