BYC30Y-600PS

WeEn's 5th Generation Hyper Fast diode with softer recovery in a 2-lead IITO220 plastic package.

Features and Benefits
  • Isolated mounting base with 2500 V (RMS) isolation
  • Low leakage current
  • Low reverse recovery current
  • Low thermal resistance
  • Soft reverse recovery with low recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Applications
  • Active PFC in air conditioner
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYC30Y-600PS VRRM  repetitive peak reverse voltage       600 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse     30 A
IFRM  repetitive peak forward current  δ = 0.5; tp = 25 µs; square-wave pulse     60 A
IFSM  non-repetitive peak forward current  tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     260 A
 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     286 A
VF  forward voltage  IF = 30 A; Tj = 25 °C   2 2.75 V
 IF = 30 A; Tj = 150 °C   1.5 2 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C     45 ns
 IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C   51   ns
 IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C   105   ns
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BYC30Y-600PS

IITO220-2L

HORIZONTAL, RAIL PACKVolume productionStandard MarkingBYC30Y-600PSQ9340 734 05127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BYC30Y-600PS9340 734 05127BYC30Y-600PSQNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BYC30Y-600PSBYC30Y-600PSQBYC30Y-600PSLeaded  H

Chemical Content - BYC30Y-600PS

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.