BYC30MW-650PT2

Hyperfast power diode in a 2-lead TO247 plastic package.

Features and Benefits
  • Excellent avalanche energy robustness
  • Low leakage current
  • Low thermal resistance
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
Applications
  • Active PFC in air conditioner/EV charger/PV
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
 BYC30MW-650PT2 VRRM  repetitive peak reverse voltage       650 V
IF(AV)  average forward current  δ = 0.5; Tmb ≤ 109 °C; square-wave pulse     30 A
IFRM  repetitive peak forward current  δ = 0.5; tp = 25 µs; Tmb ≤ 109 °C; square-wave pulse     60 A
IFSM  non-repetitive peak forward current  tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     270 A
 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     297 A
VF  forward voltage  IF = 30 A; Tj = 25 °C   2.05 2.75 V
 IF = 30 A; Tj = 150 °C   1.38 1.8 V
trr  reverse recovery time  IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C   20 24 ns
 IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C   38   ns
 IF = 30 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C   73   ns
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BYC30MW-650PT2

TO247-2L

HORIZONTAL, RAIL PACK Volume production Standard Marking BYC30MW-650PT2Q 9340 729 32127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BYC30MW-650PT2 9340 729 32127 BYC30MW-650PT2Q NA NA  

申请瑞能样品之前,请先登录或者注册

Image CAPTCHA
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BYC30MW-650PT2 BYC30MW-650PT2Q BYC30MW-650PT2 Leaded  H      

Chemical Content - BYC30MW-650PT2

 

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.