BYC15MD-600P

Hyperfast power diode in a TO252(DPAK) plastic package

Features and Benefits
  • Low leakage current
  • Low thermal resistance
  • Low reverse recovery current
  • Reduces switching losses in associated MOSFET or IGBT
  • Package meets UL94 V0 which guaranteed by Epoxy Mold Compound
Applications
  • Active PFC in air conditioner/EV charger/PV
  • Continuous Current Mode (CCM) Power Factor Correction (PFC)
  • Half-bridge/full-bridge switched-mode power supplies

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
BYC15MD-600P VRRM repetitive peak reverse voltage       600 V
IF(AV) average forward current δ = 0.5  ; Tmb ≤ 115 °C; square-wave pulse     15 A
IFRM repetitive peak forward current δ = 0.5  ; tp = 25 µs; Tmb ≤ 115 °C; square-wave pulse     30 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     150 A
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse     165 A
VF forward voltage IF = 15 A; Tj = 25 °C   1.92 2.35 V
IF = 15 A; Tj = 150 °C   1.27 1.70 V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs; Tj = 25 °C   16   ns
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BYC15MD-600P

TO252

STANDARD MARK SMDVolume productionStandard MarkingBYC15MD-600PJ9340 738 53118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BYC15MD-600P9340 738 53118BYC15MD-600PJNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BYC15MD-600PBYC15MD-600PJBYC15MD-600PLeaded  HNA1

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.