BTA308X-800ET

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. This triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.This "series ET" triac will commutate the full rated RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.

Features and Benefits
• High voltage capability
• High commutation capability with maximum false trigger immunity
• Direct interfacing with low level power drivers and logic ICs
• High junction operating temperature capability (Tj(max) = 150 °C)
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Sensitive gate for easy logic level triggering
Applications
• Compressor starting control circuits
• General purpose motor controls
• Reversing induction motor controls e.g. vertical axis washing machines
• Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA308X-800ET VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     60 A
non-repetitive peak forward current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     65 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7     10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7     10 mA
VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 400     V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/μs; snubberless condition; gate open circuit; Fig. 12 3     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA308X-800ET TO220F.jpg
TO220F
Horizontal, Rail Pack Volume production Standard Marking BTA308X-800ETQ 9340 720 26127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA308X-800ET 9340 720 26127 BTA308X-800ETQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA308X-800ET BTA308X-800ETQ   BTA308X-800ET Leaded E   NA NA

Chemical Content - BTA308X-800ET

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