BTA206X-800ET

Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package. This "series ET" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used where "high junction operating temperature" capability (Tj = 150 °C) is required.

Features and Benefits
  • 3Q technology for improved noise immunity
  • Direct interfacing with low power drivers and microcontrollers
  • Good immunity to false turn-on by dV/dt
  • High commutation capability with sensitive gate
  • High junction operating temperature capability
  • High voltage capability
  • Isolated mounting base package
  • Planar passivated for voltage ruggedness and reliability
  • Sensitive gate for easy logic level triggering
  • Triggering in three quadrants only
Applications
  • Applications subject to high temperature
  • Electronic thermostats (heating and cooling)
  • Motor controls for home appliances
  • Refrigeration and air-conditioner compressor controls
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA206X-800ET VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Th ≤ 114 °C     6 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     60 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     66 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     10 mA
IH holding current VD = 12 V; Tj = 25 °C     15 mA
VT on-state voltage IT = 7 A   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 50     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 1     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 10 V/µs; gate open circuit 2     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 6 A; dVcom/dt = 1 V/µs; gate open circuit 5     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA206X-800ET TO220F.jpg
TO220F
Horizontal, Rail Pack Volume production Standard Marking BTA206X-800ET:127 9340 656 64127
BTA206X-800ET/L03 BTA206X-800ET/L03Q 9340 697 45127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA206X-800ET 9340 656 64127 BTA206X-800ET:127 NA NA  
9340 655 92127 BTA206X-800ET,127
BTA206X-800ET/L03 9340 697 45127 BTA206X-800ET/L03Q

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA206X-800ET BTA206X-800ET:127   BTA206X-800ET Leaded E   NA NA
BTA206X-800ET/L03 Leaded E   NA NA

Chemical Content - BTA206X-800ET

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