Planar passivated Silicon Controlled Rectifier in a TO247 (SOT429) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance.
|BT158W-1200T||VDRM||repetitive peak offstate voltage||1200||V|
|VRRM||repetitive peak reverse voltage||1200||V|
|ITSM||non-repetitive peak on-state current||half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5||1100||A|
|non-repetitive peak forward current||half sine wave; Tj(init) = 25 °C; tp = 8.3 ms||1210||A|
|IT(AV)||average on-state current||half sine wave; Tmb ≤ 117 °C||80||A|
|IT(RMS)||RMS on-state current||half sine wave; Tmb ≤ 117 °C; Fig. 1; Fig. 2; Fig. 3||126||A|
|IGT||gate trigger current||VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7; Fig. 8||70||mA|
|dVD/dt||rate of rise of off-state voltage||VDM = 800 V; Tj = 125 °C; RGK = 100 Ω; (VDM = 67% of VDRM); exponential waveform||1500||V/μs|
|Type number||Package||Packing||Product status||Marking||Orderable part number||Ordering code (12NC)|
|Horizontal, Rail Pack||Volume production||Standard Marking||BT158W-1200TQ||9340 708 29127|
|Type number||Ordering code (12NC)||Orderable part number||Region||Distributor||Order sample|
|BT158W-1200T||9340 708 29127||BT158W-1200TQ||NA||NA|
|Chemical content||Orderable part number||Type number||RoHS / RHF||Leadfree conversion date||MSL||MSL LF|
Chemical Content - BT158W-1200T
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