WMSC004H12B2S-D
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor. Featured with extremely low VSD with special internal configuration.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Solder pin type. Integrated with NTC temperature sensor. Featured with extremely low VSD with special internal configuration.
WeEnPACK-B2 module with WeEn 1200V Gen2 SiC MOSFET and Press-fit pin type. Integrated with NTC temperature sensor. Featured with extremely low VSD with special internal configuration.
Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Planar passivated Silicon Controlled Rectifier (SCR) module in TO-240AA for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Silicon Carbide MOSFET designed for high frequency, high efficiency systems. (Bare die)
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.
Planar passivated Silicon Controlled Rectifier (SCR) module in WeEnTOP-B for use in applications requiring high blocking voltage capability, high inrush current capability and high thermal cycling performance.