BTA450Z-800BT

Planar passivated high commutation three quadrant triac in a IITO3P package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  • High current TRIAC
  • 3Q technology for improved noise immunity
  • High commutation capability with maximum false trigger immunity
  • High immunity to false turn-on by dV/dt
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High voltage capability
  • Least sensitive gate for highest noise immunity
  • Low thermal resistance
  • Planar passivated for voltage ruggedness and reliability
  • Triggering in three quadrants only
  • Insulated tab rated at 2500Vrms
Applications
  • Applications subject to high temperature (Tj(max) = 150 °C)
  • High current / high surge applications
  • High power / industrial controls - e.g. heating, motors, lighting
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ Max Unit
BTA450Z-800BT VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C     50 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     500 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     550 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C     50 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C     50 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C     50 mA
IH holding current VD = 12 V; Tj = 25 °C     80 mA
VT on-state voltage IT = 35 A; Tj = 25 °C     1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 2000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 20 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 15     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA450Z-800BT

SOT1292

HORIZONTAL, RAIL PACKVolume productionStandard MarkingBTA450Z-800BTQ9340 739 13127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA450Z-800BT9340 739 13127BTA450Z-800BTQNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA450Z-800BTBTA450Z-800BTQBTA450Z-800BTLeaded  E

Chemical Content - BTA450Z-800BT

 

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All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.