WNSC2D201200BT2

Silicon Carbide Schottky diode in a TO263-2L (D2PAK) plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D201200BT2 VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; Tmb ≤ 136 °C; square-wave pulse     20 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 20 A; Tj = 25 °C   1.45 1.65 V
Qr  reverse charge  IF = 20 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   45   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D201200BT2

TO263-2L

STANDARD MARK SMD Volume production Standard Marking WNSC2D201200BT26J 9340 729 19118
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D201200BT2 9340 729 19118 WNSC2D201200BT26J NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D201200BT2 WNSC2D201200BT26J WNSC2D201200BT2 Leaded  D always Pb-free   3

Chemical Content - WNSC2D201200BT2

Disclaimer

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