Planar passivated high commutation three quadrant triac in a IITO-220 internally insulated plastic package. This "series ET" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used in applications where " high juction operating temperature " capability is required.

Features and Benefits
• 3Q technology for improved noise immunity
• High commutation capability with sensitive gate
• High blocking voltage capability
• Direct interfacing with low power drives and microcontrollers
• High juction operating temperature (Tj(max) = 150 °C)
• Isolated mounting base with 2500 V (RMS) isolation
• Internally insulated package
• Planar passivated for voltage ruggedness and reliability
• Good immunity to false turn-on by dV/dt
• Triggering in three quadrants only
• Electronic thermostats (heating and cooling)
• Motor controls e.g. vacuum cleaners
• Refrigeration and air-conditioner compressor controls
• Excellent for AC switching and phase control such as heating, lighting
• Typical applications are AC solid-state switches, light, dimmers, power tools
• High juction operating temperature (Tj(max) = 150 °C)
Quality, reliability & chemical content
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA412Y-800ET VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 118 °C; Fig. 1; Fig. 2; Fig. 3     12 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     140 A
non-repetitive peak forward current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     150 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 0.5   10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 0.5   10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 0.5   10 mA
VT on-state voltage IT = 17 A; Tj = 25 °C; Fig. 10   1.3 1.6 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 150     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 12 A; dVcom/dt = 20 V/μs; (snubberless condition); gate open circuit; Fig. 12 3     A/ms
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA412Y-800ET IITO220.jpg
Horizontal, Rail Pack Volume production Standard Marking BTA412Y-800ETQ 9340 708 71127
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA412Y-800ET 9340 708 71127 BTA412Y-800ETQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA412Y-800ET BTA412Y-800ETQ   BTA412Y-800ET Leaded E   NA NA

Chemical Content - BTA412Y-800ET

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