功率集成模块

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG150N07B2P-A is a I-type NPC (Neutral Point Clamped) three-level module consisting of two 150A, 650V outer IGBTs with inverse diodes, two 150A, 650V inner IGBTs with inverse diodes, two neutral point 150A, 650 V diodes and an NTC thermistor. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG100N07B2P-S is a I-type NPC (Neutral Point Clamped) three-level module consisting of two 100A, 650V outer IGBTs with inverse diodes, two 100A, 650V inner IGBTs with inverse diodes, two neutral point 100A, 650 V diodes and an NTC thermistor. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG200H06T2S is a Half Bridge module consisting of two 200A, 650V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG300H06T2S is a Half Bridge module consisting of two 300A, 650V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG100H12T2S is a Half Bridge module consisting of two 100A, 1200V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG150H12T2S is a Half Bridge module consisting of two 150A, 1200 V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

WMG300H12T2S is a Half Bridge module consisting of two 300A, 1200V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.

WMG200H12T2S is a Half Bridge module consisting of two 200A, 1200V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

WMG400H12T2S is a Half Bridge module consisting of two 400A, 1200V IGBTs with inverse diodes, which excels in providing high current density. The integrated field stop trench IGBTs and FRDs provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability.

IGBT module integrates inhouse IGBT chips, FRD chips as well as silicon carbid chips which can offer the best class electrical performance as well product reliability. The modules are ease to use and can help to significantly reduce the power losses and improve the power system efficiency.