WNSC2D201200CW

Dual Silicon Carbide Schottky diode in a 3-lead TO247 plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D201200CW VRRM  repetitive peak reverse voltage       1200 V
IO(AV)  limiting average forward current  δ = 0.5; Tmb ≤ 138 °C; square-wave pulse; both diodes conducting     20 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 10 A; Tj = 25 °C; per diode   1.42 1.60 V
Qr  reverse charge  IF = 10 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode   22   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D201200CW

SOT429

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2D201200CW6Q 9340 729 11127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D201200CW 9340 729 11127 WNSC2D201200CW6Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D201200CW WNSC2D201200CW6Q WNSC2D201200CW Leaded  D always Pb-free    

Chemical Content - WNSC2D201200CW

 

Disclaimer

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